SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To improve the reliability of a capacitor having MIM (Metal Insulator Metal) structure, and the manufacture yield. SOLUTION: A capacitor (C) has the MIM structure consisting of a lower electrode 33 formed in an electrode recess 29 of an interlayer insulating film 28, a dielectr...

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Bibliographic Details
Main Author TORII KATSUHIRO
Format Patent
LanguageEnglish
Published 24.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To improve the reliability of a capacitor having MIM (Metal Insulator Metal) structure, and the manufacture yield. SOLUTION: A capacitor (C) has the MIM structure consisting of a lower electrode 33 formed in an electrode recess 29 of an interlayer insulating film 28, a dielectric film 35 formed on the lower electrode 33, and an upper electrode 36 formed on the dielectric film 35. Furthermore, the upper electrode 36 and the dielectric film 35 are formed in a larger area than the lower electrode 33, and the whole lower electrode 33 is arranged inside the upper electrode 36 and the dielectric film 35. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050141019