SEMICONDUCTOR DEVICE WITH BUILT-IN PASSIVE ELEMENT

• Main Authors: KIKUCHI ATSUSHI, IKEMOTO YOSHIHIKO, YONEDA YOSHIYUKI, KIMURA YOSHIJI
• Format: Patent
• Language: English
• Published: 14.09.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device with a built-in passive element, with the passive element located adjacent to a semiconductor element, having the inner leads of narrow pitch, and being made low in the profile. SOLUTION: The semiconductor element 1 is mounted on a stage 4 of a lead frame 2, having inner leads 6 and the stage 4. A passive element 8 is mounted in a recess formed in the stage 4 via an insulation member 7. A first metal wire 5 electrically connects between the semiconductor element 1 and inner leads 6. A second metal wire 5 electrically connects between an electrode of the passive element 8 and inner leads 6. The lead frame 6, semiconductor element 1, passive element 8, the first metal wire 5 and second metal wire 5 are sealed with a sealing resin 3. COPYRIGHT: (C)2006,JPO&NCIPI