SEMICONDUCTOR DEVICE FOR EVALUATION AND ITS MANUFACTURING METHOD, AND EVALUATION METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device for evaluation which can more accurately evaluate a semiconductor device by measuring the operating condition of the semiconductor device during operation (driving), and also to provide a method of manufacturing the semiconductor device for eva...

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Main Authors KIMURA KENJIRO, YAMADA TAKAFUMI, MATSUSHIGE KAZUMI, USUDA KOJI, KOBAYASHI KEI
Format Patent
LanguageEnglish
Published 14.09.2006
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Abstract PROBLEM TO BE SOLVED: To provide a semiconductor device for evaluation which can more accurately evaluate a semiconductor device by measuring the operating condition of the semiconductor device during operation (driving), and also to provide a method of manufacturing the semiconductor device for evaluation and a method of evaluating the semiconductor device. SOLUTION: Drain, source, and gate electrodes 3a, 4a, and 5 of an arbitrary semiconductor device formed on a semiconductor substrate 2 are formed, and an active region 2a wherein the carrier distribution is controlled is formed between these electrodes 3a, 4a, and 5. Then an insulation film 7 is formed for covering the electrodes 3a, 4a, and 5. An exposure surface 1a is formed wherein the active region 2a to be observed is exposed. In order to connect the electrodes 3a, 4a, and 5 to the outside, interconnection portions 3b, 4b, and 5a are formed in the insulation film 7. COPYRIGHT: (C)2006,JPO&NCIPI
AbstractList PROBLEM TO BE SOLVED: To provide a semiconductor device for evaluation which can more accurately evaluate a semiconductor device by measuring the operating condition of the semiconductor device during operation (driving), and also to provide a method of manufacturing the semiconductor device for evaluation and a method of evaluating the semiconductor device. SOLUTION: Drain, source, and gate electrodes 3a, 4a, and 5 of an arbitrary semiconductor device formed on a semiconductor substrate 2 are formed, and an active region 2a wherein the carrier distribution is controlled is formed between these electrodes 3a, 4a, and 5. Then an insulation film 7 is formed for covering the electrodes 3a, 4a, and 5. An exposure surface 1a is formed wherein the active region 2a to be observed is exposed. In order to connect the electrodes 3a, 4a, and 5 to the outside, interconnection portions 3b, 4b, and 5a are formed in the insulation film 7. COPYRIGHT: (C)2006,JPO&NCIPI
Author USUDA KOJI
YAMADA TAKAFUMI
KIMURA KENJIRO
KOBAYASHI KEI
MATSUSHIGE KAZUMI
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Snippet PROBLEM TO BE SOLVED: To provide a semiconductor device for evaluation which can more accurately evaluate a semiconductor device by measuring the operating...
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SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE FOR EVALUATION AND ITS MANUFACTURING METHOD, AND EVALUATION METHOD THEREOF
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