GAS DIFFUSION PLATE AND MANUFACTURING METHOD THEREOF

• Main Authors: WATANABE KEISUKE, MORITA TAKASHI, NAGASAKA SACHIYUKI
• Format: Patent
• Language: English
• Published: 13.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a gas diffusion plate in which yttria excellent in the plasma resistance and in the halogen gas resistance is solidly applied to the entire surface of each gas discharge hole provided to an alumina base material or an aluminum base material, which eliminates the generation of particles by preventing a material in each gas discharge hole from being etched owing to discharge, thereby enhancing the manufacturing yield of semiconductor, and providing inexpensive plate; and to provide a manufacturing method thereof. SOLUTION: A gas diffusion plate consists of an alumina base material or an aluminum base material provided with one or more circular through-holes, and an yttria cylindrical pipe shrink-fitted to each of the circular through holes and provided with a gas discharge hole. A manufacturing method thereof is also provided. COPYRIGHT: (C)2006,JPO&NCIPI