PLASMA-ETCHING METHOD

PROBLEM TO BE SOLVED: To provide a plasma-etching method which can simultaneously satisfy the requirement for the trench shape and the requirement for the aspect ratio and can form a trench having a smooth-shaped side wall. SOLUTION: In this plasma-etching method, a silicon substrate is placed on a...

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Main Authors WATANABE AKIZO, HIROSHIMA MITSURU, OKUNE MITSUHIRO, SUZUKI HIROYUKI, MIYAKE KIYOO
Format Patent
LanguageEnglish
Published 15.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PROBLEM TO BE SOLVED: To provide a plasma-etching method which can simultaneously satisfy the requirement for the trench shape and the requirement for the aspect ratio and can form a trench having a smooth-shaped side wall. SOLUTION: In this plasma-etching method, a silicon substrate is placed on a bottom electrode 120 and an etching gas is supplied through a gas introduction port 140 and is exhausted through an exhaust port 150. High-frequency power is supplied to a top electrode 110 and the bottom electrode 120 from high-frequency power sources 130a and 130b, respectively, and the etching gas is turned into plasmas by ICP method to generate active species to progress etching of the silicon substrate. For the etching gas, a mixed gas is used which mainly consists of SF6gas and is mixed with O2gas and He gas. COPYRIGHT: (C)2006,JPO&NCIPI
AbstractList PROBLEM TO BE SOLVED: To provide a plasma-etching method which can simultaneously satisfy the requirement for the trench shape and the requirement for the aspect ratio and can form a trench having a smooth-shaped side wall. SOLUTION: In this plasma-etching method, a silicon substrate is placed on a bottom electrode 120 and an etching gas is supplied through a gas introduction port 140 and is exhausted through an exhaust port 150. High-frequency power is supplied to a top electrode 110 and the bottom electrode 120 from high-frequency power sources 130a and 130b, respectively, and the etching gas is turned into plasmas by ICP method to generate active species to progress etching of the silicon substrate. For the etching gas, a mixed gas is used which mainly consists of SF6gas and is mixed with O2gas and He gas. COPYRIGHT: (C)2006,JPO&NCIPI
Author HIROSHIMA MITSURU
SUZUKI HIROYUKI
OKUNE MITSUHIRO
MIYAKE KIYOO
WATANABE AKIZO
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– fullname: MIYAKE KIYOO
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Snippet PROBLEM TO BE SOLVED: To provide a plasma-etching method which can simultaneously satisfy the requirement for the trench shape and the requirement for the...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title PLASMA-ETCHING METHOD
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