THIN-FILM-FORMING METHOD AND THIN-FILM-FORMING APPARATUS

• Main Authors: SAKURAI TAKESHI, NAGAE MATASHIYU, SHIONO ICHIRO, KYO YUSHO, YAMAZAKI MASAFUMI
• Format: Patent
• Language: English
• Published: 25.05.2006
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin-film-forming method which can produce an optical article with a substrate having little curve after a thin film has been formed thereon, and to provide a thin-film-forming apparatus. SOLUTION: The thin-film-forming apparatus 1 comprises: a substrate holder 13 for holding the substrate S; a film-forming process region 20, a film-forming process region 40 and a reaction process region 60, which are arranged on one side of the substrate holder 13; and a film-forming process region 30, a film-forming process region 50 and a reaction process region 70, which are respectively formed on the opposite side of the film-forming process region 20, the film-forming process region 40 and the reaction process region 60, with respect to the substrate holder 13. The thin-film-forming method comprises: forming the thin film on the substrate in the film-forming process region 20, the film-forming process region 40 and the reaction process region 60; and at the same time, forming the thin film on the surface of the opposite side of the substrate, in the film-forming process region 30, the film-forming process region 50 and the reaction process region 70, so as to offset the curvature of the substrate due to the thin film formed on the former side. The method thus forms the thin film on both surfaces of the substrate, while offsetting the curvature of the substrate caused by the internal stress of the thin film. COPYRIGHT: (C)2006,JPO&NCIPI