METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which a problem of washing in a copper wiring forming process using a low-k film can be solved. SOLUTION: A copper wiring layer 2 is formed on a silicon substrate 1; and a diffusion preventing film 7, an interlaye...

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Bibliographic Details
Main Authors SODA EIICHI, SUDO ITSUKI, KAGEYAMA SATOSHI
Format Patent
LanguageEnglish
Published 22.12.2005
Edition7
Subjects
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