METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: SODA EIICHI, SUDO ITSUKI, KAGEYAMA SATOSHI
• Format: Patent
• Language: English
• Published: 22.12.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which a problem of washing in a copper wiring forming process using a low-k film can be solved. SOLUTION: A copper wiring layer 2 is formed on a silicon substrate 1; and a diffusion preventing film 7, an interlayer insulating film 8, and a cap film 9 are then formed in order on the copper wiring layer 2. A hard mask 10 is then used to perform dry etching using plasma on the cap film 9, the interlayer insulating film 8, and the diffusion preventing film 7. An opening 11 is formed down to the copper wiring layer 2. At such a time, a residual electric charge 16 is generated inside the opening 11. Pure water wherein CO2is dissolved is then blown over the silicon substrate 1 in the state of rotating the silicon substrate 1. Ordinary washing treatment is performed thereafter, and a wiring layer is formed inside the opening 11. COPYRIGHT: (C)2006,JPO&NCIPI