SEMICONDUCTOR LASER ELEMENT

• Main Author: MUKAI ATSUSHI
• Format: Patent
• Language: English
• Published: 24.11.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser element having good temperature characteristics and oscillating in 650 nm wavelength band. SOLUTION: In the semiconductor laser element where an active layer and a clad layer are composed of an AlGaInP based material, an optical waveguide layer 43 arranged on the p-side of the active layer 42 is provided with a tensile strain layer 15 for suppressing diffusion of impurities into the active layer. Since diffusion of impurities is suppressed by the tensile strain layer 15, the clad layer 5 does not require a nondoped layer for suppressing diffusion of impurities. Consequently, the clad layer 5 can be doped freely such that an arbitrary concentration profile can be obtained. Since the nondoped layer can be made thin when it is provided in the clad layer 5 in order to enhance diffusion suppressing effect, total thickness of the nondoped layer included in the element is decreased and thereby the element resistance is decreased. Consequently, threshold current can be prevented from increasing by suppressing heat generation. COPYRIGHT: (C)2006,JPO&NCIPI