SUBSTRATE TREATMENT APPARATUS

• Main Author: TAKESHITA MITSUNORI
• Format: Patent
• Language: English
• Published: 08.09.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To prevent the generation of a particle or metal contamination while properly controlling a temperature of a metallic manifold in accordance with running conditions. SOLUTION: A CVD system 10 comprises: a treatment chamber 24 wherein a wafer 1 is treated; a heater unit 20 for heating the treatment chamber 24; a gas feeding pipe 45 for feeding gas into the treatment chamber 24; an exhaust pipe 44 for exhausting air in the treatment chamber 24; a manifold 26 formed using stainless steel; a temperature control gas conduit 33 laid on a flange 29 of the manifold 26; a temperature control gas conduit 38 laid at a jacket ring 37 of the outer circumference of the manifold 26; a flow rate controller 41 for controlling a flow rate of temperature control gas 43; and a temperature detector 42 for detecting the temperature of the manifold 26. The flow rate controller 41 is then configured to control the flow rate of the temperature control gas based on the detection result of the temperature detector 42. COPYRIGHT: (C)2005,JPO&NCIPI