SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: FUNAYAMA KOTA, YOSHIDA YASUKO, TAKESHIMA YUTAKA, MATSUO NOBUYUKI, UCHIMURA KATSUHIRO
• Format: Patent
• Language: English
• Published: 30.06.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device with enhanced reliability. SOLUTION: A gate electrode comprising a gate insulation film and polycrystal silicon is formed onto a semiconductor substrate, and semiconductor regions as a source and a drain are formed by ion implantation. A cobalt film and a titanium nitride film are formed on the semiconductor substrate to cover the gate electrode, and a CoSi layer is formed by reacting Co of the cobalt film with Si of the semiconductor region through a first anneal processing. Then the titanium nitride film and an unreacted cobalt film are removed by a first wet rinsing processing to leave the CoSi layer on the gate electrode and the semiconductor regions. Then a CoSi2layer is formed by reacting the CoSi layer with the gate electrode and the semiconductor regions through a second anneal processing. Thereafter, an HPM rinse processing is carried out as a second wet rinsing processing and a silicon nitride film is formed by a low pressure CVD method in a way of covering the gate electrode on the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI