SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method including a capacitance element (for instance, a MIM capacitance element) having a large margin for a leak current, and capable of easily leveling an interlayer insulating film by decreasing a step of the interlayer...

Full description

Saved in:
Bibliographic Details
Main Author YASUHARA TAKESHI
Format Patent
LanguageEnglish
Published 02.06.2005
Edition7
Subjects
Online AccessGet full text

Cover

Loading…