CONNECTING TERMINAL, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

• Main Authors: YAMAGUCHI SHINJI, ONO ATSUSHI, ASAZU TAKURO
• Format: Patent
• Language: English
• Published: 14.11.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To prevent an inter-bump short circuit when a bump is formed on a fine-pitch product by electroless plating and to ensure bump adhesion strength. SOLUTION: A first protection film 3 and a second protection film 4 are formed on an electrode pad 2, and a bump 5 is formed in a part where both the first protection film 3 and the second protection film 4 which are laminated each other have been removed. Here, an opening 3a being a part removed of the first protection film 3 located in a lower layer is formed larger than an opening 4a being a part removed of the second protection film 4 located in an upper layer, the second protection film 4 of the upper layer has a structure of being overhung, and the bottom of the bump 5 is formed so as to enter below the second protection film 4 in the outer periphery thereof. COPYRIGHT: (C)2004,JPO