METHOD OF MANUFACTURING SEMICONDUCTOR SILICON SUBSTRATE
PROBLEM TO BE SOLVED: To provide an inexpensive silicon wafer excellent in IG (intrinsic gettering) capability by suppressing nonuniformity in the crystal axis direction of a BMD (bulk micro defect) and preventing the formation of defects such as the BMD in the vicinity of an epitaxial layer. SOLUTI...
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Main Author | |
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Format | Patent |
Language | English |
Published |
07.10.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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