METHOD OF MANUFACTURING SEMICONDUCTOR SILICON SUBSTRATE

• Main Author: NINOMIYA MASAHARU
• Format: Patent
• Language: English
• Published: 07.10.2003
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide an inexpensive silicon wafer excellent in IG (intrinsic gettering) capability by suppressing nonuniformity in the crystal axis direction of a BMD (bulk micro defect) and preventing the formation of defects such as the BMD in the vicinity of an epitaxial layer. SOLUTION: Single crystal silicon is grown by adding a prescribed carbon and making the pulling speed high within a predetermined range when the single crystal silicon is pulled by a CZ method or a MCZ method. Thereby, a silicon wafer having a uniform and stable BMD density appears independently of the part of the crystal from the grown single crystal silicon, and the effect of IG treatment or the like, carried out after that is obtained uniformly independently of the top or bottom of the single crystal, and at the same time, shrinkage and dissolution of the BMD in the vicinity of the surface of a substrate becomes easy. Therefore, when an epitaxial film is formed by epitaxial growth, an epitaxial silicon wafer free from defects on the surface and in the vicinity of the surface can be obtained. COPYRIGHT: (C)2004,JPO