METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: MIYATA MASANORI, MITANI TAKESHI, YAMAMOTO HIDEMI, KONO YUICHI
• Format: Patent
• Language: English
• Published: 14.03.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To prevent exfoliation of a glued layer. SOLUTION: A glue layer 19 composed of TiN/Ti is formed on an interlayer insulating film 11 (d). Nuclei 21 of Si are formed on the glued layer 19 in a state that an edge cut is not in contact with a wafer (e). An initial nucleus forming film 23 formed of a tungsten film is formed on the glued layer 19 by a CVD method using WF6 gas and SiH4 gas. At this time, the nuclei 21 of Si act as a barrier film, and exfoliation of the glued layer 19 which is caused by corrosion of WF6 gas is prevented (f). In the state that of edge cut is in contact with the wafer, by the CVD using WF6 gas and H2 gas, a tungsten film 25 is formed on the initial nucleus forming film 23 in a region except an edge cut arrangement region. At this time, the initial nucleus forming film 23 acts as a barrier film, and exfoliation of the glued layer 19 due to the corrosion of WF6 gas is prevented (g).