METHOD OF EPITAXIALLY GROWING COMPOUND SEMICONDUCTOR LAYER AND GROWTH DEVICE

• Main Author: WATANABE TOMOJI
• Format: Patent
• Language: English
• Published: 26.12.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method of growing a compound semiconductor layer having a uniform composition and a uniform thickness to an epitaxial film by heating a substrate at a uniform temperature, and to provide a growth device. SOLUTION: A tray of the growth device is constituted of a circular plate with the unrelieved upper and lower surfaces, and a ring member for holding the circular plate and the upper and lower surfaces of the circular plate in contact with a substrate and a susceptor, are polished to raise the flatness of the circular plate. Consequently, an irregularity in the gaps between the substrate and the susceptor and the tray can be suppressed and it becomes possible to heat the substrate at a uniform temperature with good reproducibility.