FILM DEPOSITION APPARATUS USING CATHODE ARC DISCHARGE
PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in which thin films can be deposited using cathode arc discharge. SOLUTION: When irradiating a substrate 41 with a plasma beam PB generated from a...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
31.07.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in which thin films can be deposited using cathode arc discharge. SOLUTION: When irradiating a substrate 41 with a plasma beam PB generated from a target by cathode arc discharge to deposit a thin film, the normal to the substrate surface is tilted by an angle α relatively to the beam direction of the plasma beam PB. Consequently, migration at the time of film deposition is promoted, and a film having small internal stress is formed. Moreover, the film uniformity can be improved by rotating the substrate 41 in its plane. |
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AbstractList | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in which thin films can be deposited using cathode arc discharge. SOLUTION: When irradiating a substrate 41 with a plasma beam PB generated from a target by cathode arc discharge to deposit a thin film, the normal to the substrate surface is tilted by an angle α relatively to the beam direction of the plasma beam PB. Consequently, migration at the time of film deposition is promoted, and a film having small internal stress is formed. Moreover, the film uniformity can be improved by rotating the substrate 41 in its plane. |
Author | AKITA NORITAKA NAKATSU OSAMU |
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Snippet | PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | FILM DEPOSITION APPARATUS USING CATHODE ARC DISCHARGE |
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