FILM DEPOSITION APPARATUS USING CATHODE ARC DISCHARGE

• Main Authors: NAKATSU OSAMU, AKITA NORITAKA
• Format: Patent
• Language: English
• Published: 31.07.2002
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can deposite a thin film having small internal stress as the film deposition apparatus in which thin films can be deposited using cathode arc discharge. SOLUTION: When irradiating a substrate 41 with a plasma beam PB generated from a target by cathode arc discharge to deposit a thin film, the normal to the substrate surface is tilted by an angle α relatively to the beam direction of the plasma beam PB. Consequently, migration at the time of film deposition is promoted, and a film having small internal stress is formed. Moreover, the film uniformity can be improved by rotating the substrate 41 in its plane.