SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device using a low K dielectric material and an improved manufacturing method therefor. SOLUTION: A device has a semiconductor substrate (10 to 13) having an active region (15) and a low permittivity insulation layer (19) formed over the substrate. Th...

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Main Authors PING WU, CHAKRABARTI UTPAL KUMAR, ONAT BORA M, ROY BISWANATH, ROBINSON KEVIN CYRUS
Format Patent
LanguageEnglish
Published 28.09.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PROBLEM TO BE SOLVED: To provide a semiconductor device using a low K dielectric material and an improved manufacturing method therefor. SOLUTION: A device has a semiconductor substrate (10 to 13) having an active region (15) and a low permittivity insulation layer (19) formed over the substrate. The other insulation layer (20) is formed over the low permittivity insulation layer (19) by low temperature deposition such as an ion beam deposition. Next, a metallic layer (21) can be formed on the other insulation layer (20) by a lift-off technology. The metallic layer (21) is patterned to form bonding pads (23) and the bonding pads can be shifted from the active region (15). A wire bonding is formed on the boding pad (23) by use of ultrasonic energy.
AbstractList PROBLEM TO BE SOLVED: To provide a semiconductor device using a low K dielectric material and an improved manufacturing method therefor. SOLUTION: A device has a semiconductor substrate (10 to 13) having an active region (15) and a low permittivity insulation layer (19) formed over the substrate. The other insulation layer (20) is formed over the low permittivity insulation layer (19) by low temperature deposition such as an ion beam deposition. Next, a metallic layer (21) can be formed on the other insulation layer (20) by a lift-off technology. The metallic layer (21) is patterned to form bonding pads (23) and the bonding pads can be shifted from the active region (15). A wire bonding is formed on the boding pad (23) by use of ultrasonic energy.
Author ROY BISWANATH
CHAKRABARTI UTPAL KUMAR
ONAT BORA M
ROBINSON KEVIN CYRUS
PING WU
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Snippet PROBLEM TO BE SOLVED: To provide a semiconductor device using a low K dielectric material and an improved manufacturing method therefor. SOLUTION: A device has...
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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