PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light of 1 nm band to 190 nm band as light for exposure. SOLUTION: A resist film 11 is formed on a semiconductor substrate 10 by coating with a resist material having a base resin containing polystyrene in...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.09.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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