PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light of 1 nm band to 190 nm band as light for exposure. SOLUTION: A resist film 11 is formed on a semiconductor substrate 10 by coating with a resist material having a base resin containing polystyrene in...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.09.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light of 1 nm band to 190 nm band as light for exposure. SOLUTION: A resist film 11 is formed on a semiconductor substrate 10 by coating with a resist material having a base resin containing polystyrene in which hydrogen atoms at two or more positions of a benzene ring have been substituted by hydroxyl groups. The resist film 11 is patternwise exposed by irradiation with F2 laser light having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed to form the objective resist pattern 14. |
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Bibliography: | Application Number: JP19990066232 |