PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light of 1 nm band to 190 nm band as light for exposure. SOLUTION: A resist film 11 is formed on a semiconductor substrate 10 by coating with a resist material having a base resin containing polystyrene in...

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Bibliographic Details
Main Authors SASAKO MASARU, KISHIMURA SHINJI, KATSUYAMA AKIKO
Format Patent
LanguageEnglish
Published 29.09.2000
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light of 1 nm band to 190 nm band as light for exposure. SOLUTION: A resist film 11 is formed on a semiconductor substrate 10 by coating with a resist material having a base resin containing polystyrene in which hydrogen atoms at two or more positions of a benzene ring have been substituted by hydroxyl groups. The resist film 11 is patternwise exposed by irradiation with F2 laser light having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed to form the objective resist pattern 14.
Bibliography:Application Number: JP19990066232