ELECTRODE PLATE FOR PLASMA ETCHING EQUIPMENT, ENABLING FORMATION OF UNIFORM ETCHING SURFACE

• Main Authors: MORI TAMOTSU, NAKADA YOSHINOBU, MISHIMA TERUSHI, HIJI TOSHIHARU
• Format: Patent
• Language: English
• Published: 26.05.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an electrode plate for plasma etching equipment, enabling the formation of a uniform etching surface. SOLUTION: In this plasma etching equipment, an electrode plate having plural vertical through pores is disposed in a manner to be opposed to an etching plane, leaving a prescribed space between them, and etching gas is ejected through the vertical through pores of the electrode plate and a plasma is produced between both surfaces of the etching surface and the electrode plate to carry out etching. The electrode plate of this plasma etching equipment is constituted of an electrode plate which is composed of high purity silicon having unidirectionally solidified cast structure and whose plane along the direction of solidification serves as a plane opposite to the etching surface.