METODO PER LA FABBRICAZIONE DI UN DISPOSITIVO A SEMICONDUTTORE

• Main Authors: JIN YUAN, LEE ANG-GOO, JANG GEUN-HA, JANG TAE-GYU
• Format: Patent
• Language: Italian
• Published: 20.11.1991
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: To provide a method for manufacturing a semiconductor device increasing capacitor capacitance of memory elements. CONSTITUTION: A method for manufacturing a semiconductor device comprises a step of forming an α-type silicon carbide layer 12 on a first conductive layer 10 used for a first el...