MEMORIA DINAMICA AVENTE UNA STRUTTURA A TRINCEA DROGATA SULLA PARETE LATERALE E CONDENSATORE IMPILATO E RELATIVO METODO DI FABBRICAZIONE

• Main Authors: OM JAE CHUL, CHUNG IN SOOL KIM JIN HYUNG, KIM JAE WON, YOON HAN SUB
• Format: Patent
• Language: Italian
• Published: 18.05.1992
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A DRAM cell having a SDTAS structure having a trench stacked capacitor which includes a capacitor charge storage electrode which is in physical contact and is electrically connected to a N+ drain region, and a VCC/2 electrode which is electrically isolated by an ONO layer formed between the capacito...