ANTI-FUSE MEMORY CELL

An anti-fuse memory cell having a variable thickness gate oxide. The variable thickness gate oxide is formed by depositing a first oxide over a channel region of the anti-fuse memory cell, removing the first oxide in a thin oxide area of the channel region, and then thermally growing a second oxide...

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Bibliographic Details
Main Author KURJANOWICZ, Wlodek
Format Patent
LanguageChinese
English
Published 21.07.2017
Subjects
ELECTRICITY
Online AccessGet full text

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