Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication

• Main Authors: QINGHUANG LIN, DEBORAH ANN NEUMAYER
• Format: Patent
• Language: English
• Published: 07.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.