Laminated photosensitive dielectric for semiconductor device

A photosensitive dielectric 23, which may be laminated if large thickness required, is formed between the active components and the passive components and transmission lines of a semiconductor device. The photosensitive dielectric may be bonded to the substrate using a roll-on procedure including el...

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Bibliographic Details
Main Author DOMINGO A FIGUEREDO
Format Patent
LanguageEnglish
Published 07.10.1998
Edition6
Subjects
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Summary:A photosensitive dielectric 23, which may be laminated if large thickness required, is formed between the active components and the passive components and transmission lines of a semiconductor device. The photosensitive dielectric may be bonded to the substrate using a roll-on procedure including elevated temperature and pressure and may be sensitive to UV. After deposition the photosensitive dielectric is photo-patterned and then etched to enable contacts 29 to be formed.
Bibliography:Application Number: GB19980006840