Bipolar transistor fabrication with trench isolation
A bipolar transistor has a buried collector 22 on a silicon substrate 21, a collector 23 defined by trenches filled with insulating material, an intrinsic base 30 formed on the collector 23, an extrinsic base 26 electrically isolated from the silicon substrate 21 by a thermal-oxide layer 25, a condu...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
26.06.1996
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Abstract | A bipolar transistor has a buried collector 22 on a silicon substrate 21, a collector 23 defined by trenches filled with insulating material, an intrinsic base 30 formed on the collector 23, an extrinsic base 26 electrically isolated from the silicon substrate 21 by a thermal-oxide layer 25, a conductive polysilicon layer 31 formed in self-alignment to connect the intrinsic base with the extrinsic base, and an emitter 33 formed on a portion of the intrinsic base and composed of polysilicon doped with an impurity. The trench may be defined by etching, or by a side-wall nitride layer. |
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AbstractList | A bipolar transistor has a buried collector 22 on a silicon substrate 21, a collector 23 defined by trenches filled with insulating material, an intrinsic base 30 formed on the collector 23, an extrinsic base 26 electrically isolated from the silicon substrate 21 by a thermal-oxide layer 25, a conductive polysilicon layer 31 formed in self-alignment to connect the intrinsic base with the extrinsic base, and an emitter 33 formed on a portion of the intrinsic base and composed of polysilicon doped with an impurity. The trench may be defined by etching, or by a side-wall nitride layer. |
Author | TAE-HYEON HAN SOO-MIN LEE SEONG-HEARN LEE DEOK-HO CHO JIN-YOUNG KANG BYUNG-RYUL RYUM |
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Snippet | A bipolar transistor has a buried collector 22 on a silicon substrate 21, a collector 23 defined by trenches filled with insulating material, an intrinsic base... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS |
Title | Bipolar transistor fabrication with trench isolation |
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