PROCEDE DE DOPAGE DE PLAQUES DE SILICIUM

• Main Authors: BECHEVET BERNARD, JOURDAN JOHANN
• Format: Patent
• Language: French
• Published: 26.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Procédé de dopage d'une plaque de silicium pour fabriquer une cellule photovoltaïque, le procédé comprenant les étapes consistant à : - effectuer un premier dopage d'au moins une première partie (11) d'une surface (10) de la plaque de silicium, - former une couche d'oxyde (40) sur la surface (10) partiellement dopée, - effectuer un deuxième dopage au travers de la couche d'oxyde (40), de sorte à doper une autre partie (12) de la surface (10) de la plaque de silicium. A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in: performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.