PROCEDE DE DEPOT D'UN MATERIAU DIELECTRIQUE A BASE DE SILICIUM SUR DU CUIVRE

• Main Authors: TORRES JOAQUIM, DESCOUTS BRIGITTE, MOTTE PASCALE, PALLEAU JEAN
• Format: Patent
• Language: French
• Published: 27.07.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.