DISPOSITIFS SEMI-CONDUCTEURS A CANAL ETROIT ET PROCEDE DE FABRICATION DE CEUX-CI

L'INVENTION CONCERNE LA FABRICATION DE DISPOSITIFS MOS.ELLE SE CARACTERISE PAR L'IMPLANTATION D'UNE IMPURETE CHOISIE 24 DANS LE SUBSTRAT 10 A TRAVERS UNE COUCHE D'OXYDE 18 FORMANT DES BECS 20, DE MANIERE A OBTENIR UNE COUCHE D'IMPURETE 30 SE TERMINANT SUR UNE PENTE DE SUBSTR...

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Bibliographic Details
Main Author S. SATO, T. YAMAGUCHI ET A. D. RITCHIE
Format Patent
LanguageFrench
Published 20.07.1979
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:L'INVENTION CONCERNE LA FABRICATION DE DISPOSITIFS MOS.ELLE SE CARACTERISE PAR L'IMPLANTATION D'UNE IMPURETE CHOISIE 24 DANS LE SUBSTRAT 10 A TRAVERS UNE COUCHE D'OXYDE 18 FORMANT DES BECS 20, DE MANIERE A OBTENIR UNE COUCHE D'IMPURETE 30 SE TERMINANT SUR UNE PENTE DE SUBSTRAT.APPLICATION: SEMI-CONDUCTEURS A EFFET DE CHAMP A CANAL ETROIT. Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mask and the underlying silicon surface, and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.
Bibliography:Application Number: FR19780036394