MANUFACTURING AND REUSE OF SEMICONDUCTOR SUBSTRATES

A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epit...

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Main Authors HUBER, Martin, SANTOS RODRIGUEZ, Francisco, Javier, MODER, Iris, SCHULZE, Hans-Joachim, HOECHBAUER, Tobias, Franz Wolfgang, BINTER, Alexander Christian, PICCIN, Matteo, GOLLER, Bernhard
Format Patent
LanguageEnglish
French
German
Published 28.08.2024
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Abstract A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.
AbstractList A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.
Author BINTER, Alexander Christian
SANTOS RODRIGUEZ, Francisco, Javier
GOLLER, Bernhard
SCHULZE, Hans-Joachim
MODER, Iris
HOECHBAUER, Tobias, Franz Wolfgang
PICCIN, Matteo
HUBER, Martin
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– fullname: SANTOS RODRIGUEZ, Francisco, Javier
– fullname: MODER, Iris
– fullname: SCHULZE, Hans-Joachim
– fullname: HOECHBAUER, Tobias, Franz Wolfgang
– fullname: BINTER, Alexander Christian
– fullname: PICCIN, Matteo
– fullname: GOLLER, Bernhard
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DocumentTitleAlternate FABRICATION ET RÉUTILISATION DE SUBSTRATS À SEMI-CONDUCTEURS
HERSTELLUNG UND WIEDERVERWENDUNG VON HALBLEITERSUBSTRATEN
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Snippet A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title MANUFACTURING AND REUSE OF SEMICONDUCTOR SUBSTRATES
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