MANUFACTURING AND REUSE OF SEMICONDUCTOR SUBSTRATES

A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epit...

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Bibliographic Details
Main Authors HUBER, Martin, SANTOS RODRIGUEZ, Francisco, Javier, MODER, Iris, SCHULZE, Hans-Joachim, HOECHBAUER, Tobias, Franz Wolfgang, BINTER, Alexander Christian, PICCIN, Matteo, GOLLER, Bernhard
Format Patent
LanguageEnglish
French
German
Published 28.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.
Bibliography:Application Number: EP20220836320