MATERIAL STACK FOR MICROELECTRONIC DEVICE, A MICROELECTRONIC DEVICE THAT INTEGRATES SUCH STACK AND METHOD FOR MANUFACTURING SUCH STACK

The invention relates to a material stack, a microelectronic device that integrates such stack and a method for obtaining such stack.A non-limitative application of the invention relates to Phase-Change Memory device. The material stack (10) for microelectronic device (1) comprises:a. A substrate (1...

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Bibliographic Details
Main Authors Frei, Michel Ranjit, Sabbione, Chiara, Navarro, Gabriele, Tessaire, Magali, Nistor, Lavinia-Elena
Format Patent
LanguageEnglish
French
German
Published 26.06.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention relates to a material stack, a microelectronic device that integrates such stack and a method for obtaining such stack.A non-limitative application of the invention relates to Phase-Change Memory device. The material stack (10) for microelectronic device (1) comprises:a. A substrate (11),b. A first undoped crystalline layer (12) on the substrate, said undoped crystalline layer having a thickness superior to 4 nm, andc. A Si-doped crystalline chalcogenide layer (13) on the undoped crystalline layer, said Si-doped crystalline chalcogenide layer being doped with less than 20 at.%, and preferably less than 12 at.%, of Si.The provided material stack shows a satisfying stability contributing to retard the stack possible reorganization (i.e. intermixing) that could happen during the manufacturing of the material stack and during the subsequent manufacturing of said microelectronic device.
Bibliography:Application Number: EP20220315346