CHALCOGENIDE-BASED MATERIAL, AND SWITCHING DEVICE AND MEMORY DEVICE THAT INCLUDE THE SAME
Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid elemen...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
10.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element. |
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Bibliography: | Application Number: EP20220180683 |