SEMICONDUCTOR DIE COMPRISING A DEVICE

The application relates to a semiconductor die (20), comprising a device (1) in an active area (21) of the die (20), the device (1) comprising a field electrode region (10) formed in a field electrode trench (7) extending vertically into a semiconductor body (20), wherein the field electrode region...

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Bibliographic Details
Main Authors TEGEN, Stefan, BLANK, Oliver, FINNEY, Adrian, FERRARA, Alessandro
Format Patent
LanguageEnglish
French
German
Published 22.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract The application relates to a semiconductor die (20), comprising a device (1) in an active area (21) of the die (20), the device (1) comprising a field electrode region (10) formed in a field electrode trench (7) extending vertically into a semiconductor body (20), wherein the field electrode region (10) comprises a first and a second field electrode (11, 12) stacked vertically above each other in the field electrode trench (7), an edge termination structure (22) laterally between the active area (21) and a lateral edge region (23) of the die (20), the edge termination structure (22) comprising a first and a second shield electrode (31, 32) arranged laterally consecutive between the active area (21) and the lateral edge region (23) to stepwise decrease an electrical potential between the edge region (23) and the active area (21).
AbstractList The application relates to a semiconductor die (20), comprising a device (1) in an active area (21) of the die (20), the device (1) comprising a field electrode region (10) formed in a field electrode trench (7) extending vertically into a semiconductor body (20), wherein the field electrode region (10) comprises a first and a second field electrode (11, 12) stacked vertically above each other in the field electrode trench (7), an edge termination structure (22) laterally between the active area (21) and a lateral edge region (23) of the die (20), the edge termination structure (22) comprising a first and a second shield electrode (31, 32) arranged laterally consecutive between the active area (21) and the lateral edge region (23) to stepwise decrease an electrical potential between the edge region (23) and the active area (21).
Author TEGEN, Stefan
FINNEY, Adrian
FERRARA, Alessandro
BLANK, Oliver
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DocumentTitleAlternate PUCE SEMI-CONDUCTRICE COMPRENANT UN DISPOSITIF
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Snippet The application relates to a semiconductor die (20), comprising a device (1) in an active area (21) of the die (20), the device (1) comprising a field...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DIE COMPRISING A DEVICE
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