FIELD EFFECT TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC CIRCUIT

• Main Authors: HUANG, Huidong, YANG, Gangyi, YI, Hongsheng, WANG, Hanxing
• Format: Patent
• Language: English; French; German
• Published: 01.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This application provides a field effect transistor, a production method thereof, and an electronic circuit. The field effect transistor includes a channel layer (2), a control gate (3), a passivation layer (4), a gate metal layer (5), an inter-layer dielectric layer (6), and a source-drain metal layer (7) that are sequentially stacked on a substrate (1). The gate metal layer includes a metal gate (51) and a step (52) that are disposed at a spacing. The source-drain metal layer includes a source (71), a drain (72), and a field plate (73) electrically connected to the source. The field plate extends from the source to one side of the drain and is disposed to be disconnected from the drain. The field plate specifically includes a first-order field plate (731) and a second-order field plate (732) whose orthographic projections on the substrate are located between the metal gate and the drain. The second-order field plate is a part covering the step, and the first-order field plate is a part other than the second-order field plate. A pattern of the step is also formed while a pattern of the metal gate is formed on the gate metal layer, so that the part covering the step at the source-drain metal layer is raised to form the second-order field plate. In this way, an entire field plate needs to be processed by performing a patterning process for only one time. Therefore, complexity and industrial costs of a production process of a field plate are reduced.