MEMORY DEVICE DETECTING LEAKAGE CURRENT AND OPERATION METHOD THEREOF

Disclosed is an operation method of a memory device which includes floating a first driving line corresponding to a first word line from the first word line and precharging the first driving line with a first voltage, floating the first driving line from the first voltage to sense a first voltage va...

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Bibliographic Details
Main Author PARK, Hyunkook
Format Patent
LanguageEnglish
French
German
Published 04.01.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Abstract Disclosed is an operation method of a memory device which includes floating a first driving line corresponding to a first word line from the first word line and precharging the first driving line with a first voltage, floating the first driving line from the first voltage to sense a first voltage variation of the first driving line, storing the first voltage variation in a first capacitor, electrically connecting the first driving line to the first word line and precharging the first driving line and the first word line with the first voltage, floating the first driving line and the first word line from the first voltage to sense a second voltage variation of the first driving line and the first word line, and outputting a first detection signal corresponding to a first leakage current through the first word line based on the first voltage variation and the second voltage variation.
AbstractList Disclosed is an operation method of a memory device which includes floating a first driving line corresponding to a first word line from the first word line and precharging the first driving line with a first voltage, floating the first driving line from the first voltage to sense a first voltage variation of the first driving line, storing the first voltage variation in a first capacitor, electrically connecting the first driving line to the first word line and precharging the first driving line and the first word line with the first voltage, floating the first driving line and the first word line from the first voltage to sense a second voltage variation of the first driving line and the first word line, and outputting a first detection signal corresponding to a first leakage current through the first word line based on the first voltage variation and the second voltage variation.
Author PARK, Hyunkook
Author_xml – fullname: PARK, Hyunkook
BookMark eNqNyj8KwjAUB-AMOvjvDu8CDrF6gJD82gZNUsJTcCpFnpOkhXp_dPAATt_yrdWijEVWygWElO_kcPMWXxiWfWzoAnM2Dchec0ZkMtFR6pAN-xQpgNvkiFtkpHqrls_hNcvu50ZRDbbtXqaxl3kaHlLk3aM7al2dDtro6o_yAQ1OLPI
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
DocumentTitleAlternate SPEICHERVORRICHTUNG ZUR ERFASSUNG VON LECKSTROM UND BETRIEBSVERFAHREN DAFÜR
DISPOSITIF DE MÉMOIRE PERMETTANT DE DÉTECTER UN COURANT DE FUITE ET SON PROCÉDÉ DE FONCTIONNEMENT
ExternalDocumentID EP4113521A1
GroupedDBID EVB
ID FETCH-epo_espacenet_EP4113521A13
IEDL.DBID EVB
IngestDate Fri Jul 19 13:13:16 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_EP4113521A13
Notes Application Number: EP20220172241
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230104&DB=EPODOC&CC=EP&NR=4113521A1
ParticipantIDs epo_espacenet_EP4113521A1
PublicationCentury 2000
PublicationDate 20230104
PublicationDateYYYYMMDD 2023-01-04
PublicationDate_xml – month: 01
  year: 2023
  text: 20230104
  day: 04
PublicationDecade 2020
PublicationYear 2023
RelatedCompanies Samsung Electronics Co., Ltd
RelatedCompanies_xml – name: Samsung Electronics Co., Ltd
Score 3.4388742
Snippet Disclosed is an operation method of a memory device which includes floating a first driving line corresponding to a first word line from the first word line...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title MEMORY DEVICE DETECTING LEAKAGE CURRENT AND OPERATION METHOD THEREOF
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230104&DB=EPODOC&locale=&CC=EP&NR=4113521A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1NT8IwtCH4eVPUiF_pwXBbZFnHtgMxo31jqPvIMgieCBs14TKIm_Hv-1YBveipzWvy0r7m9X30fRBy79hSWvrc1GSeGRpzZK7Zc8vR9FqYGvncZqqLQhD2_DF7mprTBlluc2FUndBPVRwROSpHfq_Ue73-cWIJFVtZPmRLBK0evbQvOhvrGPXpuputGPQhjkTEO5zjrBMmfabrqGroLhpKe6hFWzUzwGRQJ6Wsf0sU74Tsx4isqE5JQxYtcsS3jdda5DDY_He3yIEK0MxLBG6YsDwjIoAgSl6pgMmIAw4p8HQUDukLuM_uECgfJwmEKXVDQaMYvt1QNIDUjwRNfUgg8s4J9SDlvoYbm-2IMIN4dwTjgjSLVSEvCe2aC1Sxeo5p6RljOd4IezNzw5JWNzPkwm6T9p9orv5ZuybHNTWVr4HdkGb1_iFvUfpW2Z2i2xegT4JK
link.rule.ids 230,309,783,888,25576,76882
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1NT8Iw9IXgB94UNeJnD4bbIss6th0WM9qOIewjSyF4ImzUhMsgMuPft6uAXvTU5jV5aV_z-j76PgAeHVsIS5-bmsgzQ8OOyDV7bjmaXglTI5_bWHVRCKNuMMYvU3Nag-UuF0bVCf1UxRElR-WS30v1Xq9_nFhUxVZunrKlBK2efe7S9tY6lvp01c2W9lyWxDQmbULkrB2lLtZ1qWronjSUDqSGbVfNDtikVyWlrH9LFP8UDhOJrCjPoCaKJjTIrvFaE47D7X93E45UgGa-kcAtE27OgYYsjNNXRNlkQJgcOCN8EPXRiHlDr88QGacpizjyIorihH27oVDIeBBTxAOWsti_AOQzTgJNbmy2J8KMJfsjGJdQL1aFuALUMRdSxeo6pqVnGOfyRvCbmRuWsDqZIRZ2C1p_orn-Z-0BGgEPR7PRIBrewElFWeV3wLdQL98_xJ2UxGV2r2j4BeT3hTo
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=MEMORY+DEVICE+DETECTING+LEAKAGE+CURRENT+AND+OPERATION+METHOD+THEREOF&rft.inventor=PARK%2C+Hyunkook&rft.date=2023-01-04&rft.externalDBID=A1&rft.externalDocID=EP4113521A1