DUAL-CHANNEL BURIED WAVEGUIDE AND METHOD FOR FABRICATING THE SAME

• Main Authors: Caillaud, Christophe, Calo, Cosimo
• Format: Patent
• Language: English; French; German
• Published: 13.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A general embodiment relates to an apparatus (1) comprising a first cladding semi-conductor layer stack (2) of a first conductivity type, an active semi-conductor layer stack (3) for producing optical gain and/or light emission, said active semi-conductor layer stack (3) being formed on said first cladding semi-conductor layer (2) and buried under a second cladding semi-conductor layer stack (4) of a second conductivity type, comprising at least one regrowth layer (41). An integrated dual-channel buried waveguide (W) is formed along the longitudinal axis of the apparatus (1) and comprises at least one central stripe portion (S) with a dual channel (C) of two channels (C1, C2) buried in a semi-conductor layer stack (5) and formed along both sides of the stripe (S) and extending through the first cladding semi-conductor layer stack (2), the active semi-conductor layer stack (3) and the second cladding semi-conductor layer stack (4). On respective edges of the channels (C1, C2) which are opposite the central strip portion (S), there are lateral zones (Ll, L2) within which there are vertical trenches (Tl, T2) perpendicular to the longitudinal axis of the apparatus and crossing through the thickness of the apparatus (1) up to the level of the active layer stack (3), said vertical trenches (Tl, T2) extending longitudinally through the entire thickness of said active layer stack (3) up to the edges of the channels (C1, C2) which are opposite the central strip portion (S), so as to form respectively two spaces (V1, V2) located in the lateral zones (Ll, L2) and having each the shape of an inverted T.