FILM-FORMING METHOD AND FILM-FORMING APPARATUS

The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that do...

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Main Authors MUROTANI, Hiroshi, OHTAKI, Yoshiyuki, MIYAUCHI, Mitsuhiro, HASEGAWA, Tomokazu, MATSUDAIRA, Takayuki
Format Patent
LanguageEnglish
French
German
Published 14.02.2024
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Abstract The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that does not change a composition of the vapor deposition material; setting a second region (B) including the vapor deposition material inside the film-forming chamber (2a) to 0.05 Pa or less; and in this state, vaporizing the vapor deposition material in the second region (B) by a vacuum vapor deposition method to form films of the vaporized vapor deposition material on the vapor deposition objects in the first region (A).
AbstractList The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that does not change a composition of the vapor deposition material; setting a second region (B) including the vapor deposition material inside the film-forming chamber (2a) to 0.05 Pa or less; and in this state, vaporizing the vapor deposition material in the second region (B) by a vacuum vapor deposition method to form films of the vaporized vapor deposition material on the vapor deposition objects in the first region (A).
Author HASEGAWA, Tomokazu
MIYAUCHI, Mitsuhiro
OHTAKI, Yoshiyuki
MATSUDAIRA, Takayuki
MUROTANI, Hiroshi
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DocumentTitleAlternate PROCÉDÉ DE FORMATION DE FILM ET APPAREIL DE FORMATION DE FILM
FILMBILDUNGSVERFAHREN UND FILMBILDUNGSVORRICHTUNG
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RelatedCompanies Shincron Co., Ltd
TOKAI UNIVERSITY EDUCATIONAL SYSTEM
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Snippet The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A)...
SourceID epo
SourceType Open Access Repository
SubjectTerms CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Title FILM-FORMING METHOD AND FILM-FORMING APPARATUS
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