FILM-FORMING METHOD AND FILM-FORMING APPARATUS
The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that do...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
14.02.2024
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Subjects | |
Online Access | Get full text |
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Abstract | The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that does not change a composition of the vapor deposition material; setting a second region (B) including the vapor deposition material inside the film-forming chamber (2a) to 0.05 Pa or less; and in this state, vaporizing the vapor deposition material in the second region (B) by a vacuum vapor deposition method to form films of the vaporized vapor deposition material on the vapor deposition objects in the first region (A). |
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AbstractList | The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that does not change a composition of the vapor deposition material; setting a second region (B) including the vapor deposition material inside the film-forming chamber (2a) to 0.05 Pa or less; and in this state, vaporizing the vapor deposition material in the second region (B) by a vacuum vapor deposition method to form films of the vaporized vapor deposition material on the vapor deposition objects in the first region (A). |
Author | HASEGAWA, Tomokazu MIYAUCHI, Mitsuhiro OHTAKI, Yoshiyuki MATSUDAIRA, Takayuki MUROTANI, Hiroshi |
Author_xml | – fullname: MUROTANI, Hiroshi – fullname: OHTAKI, Yoshiyuki – fullname: MIYAUCHI, Mitsuhiro – fullname: HASEGAWA, Tomokazu – fullname: MATSUDAIRA, Takayuki |
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DocumentTitleAlternate | PROCÉDÉ DE FORMATION DE FILM ET APPAREIL DE FORMATION DE FILM FILMBILDUNGSVERFAHREN UND FILMBILDUNGSVORRICHTUNG |
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RelatedCompanies | Shincron Co., Ltd TOKAI UNIVERSITY EDUCATIONAL SYSTEM |
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Snippet | The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A)... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | FILM-FORMING METHOD AND FILM-FORMING APPARATUS |
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