FILM-FORMING METHOD AND FILM-FORMING APPARATUS

The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that do...

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Bibliographic Details
Main Authors MUROTANI, Hiroshi, OHTAKI, Yoshiyuki, MIYAUCHI, Mitsuhiro, HASEGAWA, Tomokazu, MATSUDAIRA, Takayuki
Format Patent
LanguageEnglish
French
German
Published 14.02.2024
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Summary:The disclosure includes: installing at least a vapor deposition material and substrates (S) inside a film-forming chamber (2a); setting a first region (A) including the substrates (S) inside the film-forming chamber (2a) to an atmosphere of 0.05 to 100 Pa by evacuation and/or supply of a gas that does not change a composition of the vapor deposition material; setting a second region (B) including the vapor deposition material inside the film-forming chamber (2a) to 0.05 Pa or less; and in this state, vaporizing the vapor deposition material in the second region (B) by a vacuum vapor deposition method to form films of the vaporized vapor deposition material on the vapor deposition objects in the first region (A).
Bibliography:Application Number: EP20200876019