SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ARRANGEMENT COMPRISING SEMICONDUCTOR DEVICES

• Main Authors: LAVEN, Johannes Georg, BUSCHHORN, Stefan, MÜLLER, Christian Robert
• Format: Patent
• Language: English; French; German
• Published: 15.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

A semiconductor device (500) comprises a plurality of transistor sections (Tl) that are separated from each other, wherein each of the plurality of transistor sections (T1) comprises an emitter electrode (41) and a collector electrode (361), and a plurality of diode sections (D1) that are separated from each other, wherein each of the plurality of diode sections (Dl) comprises an anode electrode (46) and a cathode electrode (362). Either, each of the plurality of transistor sections (Tl) is electrically coupled to a common gate pad (45), and a resulting ratio between an active transistor part and an active diode part of the semiconductor device (500) may be adjusted by activating a first number of transistor sections (T1) by selectively contacting the emitter electrodes (41) and the collector electrodes (361) of the first number of transistor sections (Tl), and by activating a second number of diode sections (D1) by selectively contacting the anode electrodes (46) and the cathode electrodes of the second number of diode sections (D1). Or, each of the plurality of transistor sections (Tl) comprises a gate pad (45n), and a plurality of diode sections (Dl) that are separated from each other, wherein each of the plurality of diode sections (Dl) comprises an anode electrode (46) and a cathode electrode (362), wherein a ratio between an active transistor part and an active diode part of the semiconductor device (500) may be adjusted by activating a first number of transistor sections (T1) by selectively contacting the emitter electrodes (41), the collector electrodes (361), and the gate pads (45n) of the first number of transistor sections (Tl), and by activating a second number of diode sections (Dl) by selectively contacting the anode electrodes (46) and the cathode electrodes (362) of the second number of diode sections (Dl).