NEGATIVE CAPACITANCE SEMICONDUCTOR SENSOR
The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically conductive channel; a first insulator (27)...
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Format | Patent |
Language | English French German |
Published |
24.06.2020
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Abstract | The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically conductive channel; a first insulator (27) between the semiconductor channel element and a solution (3) to be sensed; a reference electrode (9) configured to be in contact with the solution (3), the reference electrode (9) being configured to set an electric potential of the solution; a bias voltage source (5) for generating an external sensor bias voltage for electrically biasing the reference electrode (9); and a sensing surface (27, 37) for interacting with the solution (3) comprising analytes for generating a surface potential change at the sensing surface dependent on the concentration of the analytes in the solution. The sensor further comprises a ferroelectric capacitance element (7) between the first insulator (27) and the bias voltage source (5) for generating a negative capacitance for providing a differential gain between the external sensor bias voltage and an internal sensor bias voltage sensed at a surface of the channel element (25) facing the first insulator (27) or ferroelectric capacitance element (7). |
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AbstractList | The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically conductive channel; a first insulator (27) between the semiconductor channel element and a solution (3) to be sensed; a reference electrode (9) configured to be in contact with the solution (3), the reference electrode (9) being configured to set an electric potential of the solution; a bias voltage source (5) for generating an external sensor bias voltage for electrically biasing the reference electrode (9); and a sensing surface (27, 37) for interacting with the solution (3) comprising analytes for generating a surface potential change at the sensing surface dependent on the concentration of the analytes in the solution. The sensor further comprises a ferroelectric capacitance element (7) between the first insulator (27) and the bias voltage source (5) for generating a negative capacitance for providing a differential gain between the external sensor bias voltage and an internal sensor bias voltage sensed at a surface of the channel element (25) facing the first insulator (27) or ferroelectric capacitance element (7). |
Author | Bellando, Francesco Ionescu, Mihai Adrian Saeidi, Ali |
Author_xml | – fullname: Ionescu, Mihai Adrian – fullname: Saeidi, Ali – fullname: Bellando, Francesco |
BookMark | eNrjYmDJy89L5WTQ9HN1dwzxDHNVcHYMcHT2DHH0c3ZVCHb19XT293MJdQ7xDwLy_IL9g3gYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSbxrgLGZuaGhpaWjoTERSgDfhyX2 |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences Physics |
DocumentTitleAlternate | NEGATIV-KAPAZITIVER HALBLEITERSENSOR CAPTEUR À SEMI-CONDUCTEUR À CAPACITÉ NÉGATIVE |
ExternalDocumentID | EP3671199A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_EP3671199A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:05:46 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English French German |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_EP3671199A13 |
Notes | Application Number: EP20180213348 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200624&DB=EPODOC&CC=EP&NR=3671199A1 |
ParticipantIDs | epo_espacenet_EP3671199A1 |
PublicationCentury | 2000 |
PublicationDate | 20200624 |
PublicationDateYYYYMMDD | 2020-06-24 |
PublicationDate_xml | – month: 06 year: 2020 text: 20200624 day: 24 |
PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | Ecole Polytechnique Fédérale de Lausanne (EPFL) |
RelatedCompanies_xml | – name: Ecole Polytechnique Fédérale de Lausanne (EPFL) |
Score | 3.270351 |
Snippet | The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
Title | NEGATIVE CAPACITANCE SEMICONDUCTOR SENSOR |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200624&DB=EPODOC&locale=&CC=EP&NR=3671199A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LasMwTJTueduyjXYvchiBHcJI48TNIYzUSdYOmoQ0Lb2VvAq9pGXJ2O9PNmm3y3azZZBlgSzJ1gPgaVjqGdE0S6VZqquEGlTNshxdFY2UFtXWuSlyYaaBOZ6T96Wx7MBmnwsj6oR-ieKIKFE5ynsj7uvdzyOWK2Ir65dsg6Dtq5_YrtJ6x9w_HhDFHdleFLohUxjDkRLEtm5SpMhy0FE64lY0L7PvLUY8KWX3W6P4F3AcIbKquYROWUlwxvaN1yQ4nbb_3RKciADNvEZgK4T1FTwH3puTTBaezJzIYZOE95eRZ5yhYeDOWRLGOAtmYXwNsu8lbKzi7qvDSVdedKBTv4Futa3KHsioUEq9oIVlWGtiaXpqGENedIcUVEvRwOtD_080t_-s3cE5ZxkPfBqQe-g2H5_lA6rYJnsUzPkGx656dA |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LbsIwzELswW4b2zT27GGqtEM1laYNPaCppO1gow9BQdxQX0hcClo77ffnRIXtst0SR3IcS47txA-Ax16uJURVTYUmsaYQqlMlSVJ0VVSSm1RdpYbIhfF8Yzgjbwt90YD1LhdG1An9EsURUaJSlPdK3Nfbn0csW8RWls_JGkGbFzfq23LtHXP_uEtke9B3wsAOmMwYjmR_0tcMihSZFjpKB5QX5-WW03zAk1K2vzWKewqHISIrqjNo5EUbWmzXeK0Nx179392GIxGgmZYIrIWwPIcn33m1otHckZgVWmwU8f4y0pQzNPDtGYuCCc78aTC5AMl1IjZUcPfl_qRLJ9zTqV1Cs9gU-RVIqFByLaOZqZsrYqparOs9XnSHZFSN0cDrQOdPNNf_rD1Aaxh54-V45L_fwAlnHw-C6pJbaFYfn_kdqtsquReM-gap5H1h |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=NEGATIVE+CAPACITANCE+SEMICONDUCTOR+SENSOR&rft.inventor=Ionescu%2C+Mihai+Adrian&rft.inventor=Saeidi%2C+Ali&rft.inventor=Bellando%2C+Francesco&rft.date=2020-06-24&rft.externalDBID=A1&rft.externalDocID=EP3671199A1 |