DEPOSITION METHODOLOGY FOR SUPERCONDUCTOR INTERCONNECTS

• Main Authors: LUU, Vivien M, MCLAUGHLIN, Sean R, KIRBY, Christopher F, RENNIE, Michael
• Format: Patent
• Language: English; French; German
• Published: 08.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.