METHOD OF PRODUCING SEMICONDUCTOR SINTERED BODY, ELECTRICAL/ELECTRONIC MEMBER AND SEMICONDUCTOR SINTERED BODY

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 µm or less, and the electrical conductivity is 10,000 S/m or higher.

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Bibliographic Details
Main Author SADAYORI, Naoki
Format Patent
LanguageEnglish
French
German
Published 30.08.2023
Subjects
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 µm or less, and the electrical conductivity is 10,000 S/m or higher.
Bibliography:Application Number: EP20180803228