APPARATUS AND METHOD FOR PATTERNED PROCESSING
An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5). According to the invention, the apparatus comprises...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French German |
Published |
25.03.2020
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Subjects | |
Online Access | Get full text |
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Abstract | An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5). According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5). |
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AbstractList | An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5). According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5). |
Author | BRUNEAU, Bastien HABKA, Nada BENMAMMAR, Nacib JOHNSON, Erik POULAIN, Gilles BULKIN, Pavel |
Author_xml | – fullname: JOHNSON, Erik – fullname: POULAIN, Gilles – fullname: BULKIN, Pavel – fullname: BRUNEAU, Bastien – fullname: HABKA, Nada – fullname: BENMAMMAR, Nacib |
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DocumentTitleAlternate | APPAREIL ET PROCÉDÉ DESTINÉS AU TRAITEMENT À MOTIFS VORRICHTUNG UND VERFAHREN ZUR GEMUSTERTEN VERARBEITUNG |
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Snippet | An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | APPARATUS AND METHOD FOR PATTERNED PROCESSING |
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