3D SEMICONDUCTOR DEVICE AND STRUCTURE

• Main Authors: LUSKY, Eli, HAN, Jin-Woo, OR-BACH, Zvi
• Format: Patent
• Language: English; French; German
• Published: 02.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A 3D memory device, the device including: a first vertical pillar; a second vertical pillar, where the first vertical pillar and the second vertical pillar function as a source or a drain for a plurality of overlaying horizontally-oriented memory transistors, where the plurality of overlaying horizontally-oriented memory transistors are self-aligned being formed following the same lithography step; and memory control circuits, where the memory control circuits are disposed at least partially directly underneath the plurality of overlaying horizontally-oriented memory transistors, or are disposed at least partially directly above the plurality of overlaying horizontally-oriented memory transistors.