SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Disclosed is a semiconductor device including: a semiconductor substrate having a first surface; a first conductive film (CF1) that is located over the first surface and is formed to circle in plan view; a second conductive film (CF2) that is located over the first surface and surrounds the outer pe...

Full description

Saved in:
Bibliographic Details
Main Author AMO, Atsushi
Format Patent
LanguageEnglish
French
German
Published 22.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract Disclosed is a semiconductor device including: a semiconductor substrate having a first surface; a first conductive film (CF1) that is located over the first surface and is formed to circle in plan view; a second conductive film (CF2) that is located over the first surface and surrounds the outer periphery of the first conductive film in plan view; a first insulating spacer (ISS1) located between the first conductive film and the second conductive film; a first gate insulating film (GIF1), comprising a charge accumulation layer, that is located between the first surface and the first conductive film and the accumulated amount of charges of which changes due to a change in the voltage between the first conductive film and the semiconductor substrate; and a second gate insulating film (GIF2) located between the first surface and the second conductive film.
AbstractList Disclosed is a semiconductor device including: a semiconductor substrate having a first surface; a first conductive film (CF1) that is located over the first surface and is formed to circle in plan view; a second conductive film (CF2) that is located over the first surface and surrounds the outer periphery of the first conductive film in plan view; a first insulating spacer (ISS1) located between the first conductive film and the second conductive film; a first gate insulating film (GIF1), comprising a charge accumulation layer, that is located between the first surface and the first conductive film and the accumulated amount of charges of which changes due to a change in the voltage between the first conductive film and the semiconductor substrate; and a second gate insulating film (GIF2) located between the first surface and the second conductive film.
Author AMO, Atsushi
Author_xml – fullname: AMO, Atsushi
BookMark eNrjYmDJy89L5WRwDXb19XT293MJdQ7xD1JwcQ3zdHZVcPRzUfB19At1c3QOCQ3y9HNX8HUN8fB3UfB3U8CmgYeBNS0xpziVF0pzMyi4uYY4e-imFuTHpxYXJCan5qWWxLsGGJsam5uYmzsaGxOhBABa8y2Z
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION D'UN TEL DISPOSITIF
ExternalDocumentID EP3537477A3
GroupedDBID EVB
ID FETCH-epo_espacenet_EP3537477A33
IEDL.DBID EVB
IngestDate Fri Aug 16 05:50:12 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_EP3537477A33
Notes Application Number: EP20190155607
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200722&DB=EPODOC&CC=EP&NR=3537477A3
ParticipantIDs epo_espacenet_EP3537477A3
PublicationCentury 2000
PublicationDate 20200722
PublicationDateYYYYMMDD 2020-07-22
PublicationDate_xml – month: 07
  year: 2020
  text: 20200722
  day: 22
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies Renesas Electronics Corporation
RelatedCompanies_xml – name: Renesas Electronics Corporation
Score 3.2853165
Snippet Disclosed is a semiconductor device including: a semiconductor substrate having a first surface; a first conductive film (CF1) that is located over the first...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200722&DB=EPODOC&locale=&CC=EP&NR=3537477A3
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LTsMwzBoDATcYoI2XckC9VaxvdphQl6QaSH1otNNu05K20i7dxIr4fZxqGxyAm5UolmPF8SO2A_AwyKXroV-i53hedNuQpj6QRamXcvGkOlXnA9Fk-UbuOLNfZ86sBctdLUzTJ_SzaY6IEiVR3uvmvl5_B7FYk1u5eRRLHFo9B-mQaVvvWAXeTFNjoyFPYhZTjVKEtGgytBwLDWfPtw7gUFnRqs0-n45UUcr6p0YJzuAoQWRVfQ6tourACd19vNaB43D73o3gVvQ2F8DfFMfiiGU0jSeE8ekL5cSPGAn9KAt8mmYqsYGEPB3HjMQB-W3BJZCAp3SsIz3z_d7nPNlTbl1Bu1pVRRcIehmuZ5SiL4zSzkW5sFGzm9Lp5265kK7oQe9PNNf_zN3AqWKiil2a5i206_eP4g6Vbi3uG3Z9AY1OgJw
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUSN-9sHsbRG2sckDMaPtMpRtBDfiG6HdlvAyiMz473tdAH1Q35o2vVwvvV7vevcrwH0vlbaDfome4n7RrY409J7Mcj2X80eFVJ32RJXlG9p-Yj2_dd9qsNjWwlQ4oZ8VOCJqlER9L6vzevUdxGJVbuX6QSywa_nkxX2mbbxjFXgzDI0N-nwcsYhqlGJLCyd9s2vixdlxzT3Yd9AjVDD7fDpQRSmrnxbFO4aDMRIryhOoZUUTGnT78VoTDoPNezc2N6q3PgX-qiQWhSyhcTQhjE-HlBM3ZCRww8RzaZyoxAYS8NiPGIk88tuEMyAej6mvIz-z3dpnfLzj3DyHerEssgsg6GXYTicXbdHJrVTkcwstuyG77dTO59IWLWj9Sebyn7E7aPhxMJqNhuHLFRwpgao4pmFcQ718_8hu0ACX4rYS3Re3IoOH
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE+AND+MANUFACTURING+METHOD+OF+SEMICONDUCTOR+DEVICE&rft.inventor=AMO%2C+Atsushi&rft.date=2020-07-22&rft.externalDBID=A3&rft.externalDocID=EP3537477A3