MANUFACTURING OF FET DEVICES HAVING LIGHTLY DOPED DRAIN AND SOURCE REGIONS

Embodiments described herein generally relate to methods of manufacturing n-type lightly doped drains and p-type lightly doped drains. In one method, photoresist mask is used to etch a transistor, and the mask is left in place (i.e., reused) to protect other devices and poly while a high energy impl...

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Bibliographic Details
Main Authors FANG, SHENQING, KIM, UNSOON
Format Patent
LanguageEnglish
French
German
Published 23.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments described herein generally relate to methods of manufacturing n-type lightly doped drains and p-type lightly doped drains. In one method, photoresist mask is used to etch a transistor, and the mask is left in place (i.e., reused) to protect other devices and poly while a high energy implantation is performed in alignment with the photoresist mask, such that the implantation is adjacent to the etched transistor. One example of a high energy implantation is forming lightly doped source and dram regions. This technique of reusing a photoresist mask can be employed for creating lightly doped source and drain regions of one conductivity followed by using the technique a second time to create lightly doped source and drain regions of the complementary conductivity type. This may prevent use of at least one hard mask during manufacturing.
Bibliography:Application Number: EP20140746768