Vertical semiconductor device, and method of manufacturing the vertical semiconductor device

• Main Authors: NIIMURA, Yasushi, SAKATA, Toshiaki
• Format: Patent
• Language: English; French; German
• Published: 05.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a vertical semiconductor device 100, and a method of manufacturing the vertical semiconductor device 100, such that it is possible to obtain low on-state resistance, high avalanche withstand, high turn-off withstand, and high reverse recovery withstand. A vertical semiconductor device 100 including an element active portion 3 and a voltage withstanding structure portion 2 has a first main electrode and a gate pad electrode 7 on a first main surface of the element active portion 3, includes first parallel pn layers 10 in a drift layer 16 below the first main electrode, and includes second parallel pn layers 13 below the gate pad electrode 7. The vertical semiconductor device 100 includes a first conductivity type isolation region 20 between the second parallel pn layers 13 below the gate pad electrode 7 and a p-type well region 5 disposed in a surface layer of the drift layer 16, and by the repetition pitch T2 of the second parallel pn layers 13 being shorter than the repetition pitch T1 of the first parallel pn layers 10, it is possible to obtain low on-state resistance, high avalanche withstand, high turn-off withstand, and high reverse recovery withstand.